Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge

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To take into account the presence of multiple light-induced defect states in hydrogenated amorphous silicon (a-Si:H) the evolution of the entire spectra of photoconductive subgap absorption, a(hn ), has been analyzed. Using this approach two distinctly different light-induced defect states centered
around 1.0 and 1.2 eV from the conduction band edge are clearly identified. Results are presented on their evolution and respective effects on carrier recombination that clearly point to the importance of these states in evaluating the stability of different a-Si:H solar cell materials, as well as elucidating the origin of the Staebler–Wronski effect.

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APA

Pearce, J. (2019). Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge. Afribary. Retrieved from https://afribary.com/works/light-induced-defect-states-in-hydrogenated-amorphous-silicon-centered-around-1-0-and-1-2-ev-from-the-conduction-band-edge

MLA 8th

Pearce, Joshua "Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge" Afribary. Afribary, 15 Apr. 2019, https://afribary.com/works/light-induced-defect-states-in-hydrogenated-amorphous-silicon-centered-around-1-0-and-1-2-ev-from-the-conduction-band-edge. Accessed 15 Aug. 2022.

MLA7

Pearce, Joshua . "Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge". Afribary, Afribary, 15 Apr. 2019. Web. 15 Aug. 2022. < https://afribary.com/works/light-induced-defect-states-in-hydrogenated-amorphous-silicon-centered-around-1-0-and-1-2-ev-from-the-conduction-band-edge >.

Chicago

Pearce, Joshua . "Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge" Afribary (2019). Accessed August 15, 2022. https://afribary.com/works/light-induced-defect-states-in-hydrogenated-amorphous-silicon-centered-around-1-0-and-1-2-ev-from-the-conduction-band-edge