Uniform factor modeling with the Relativistic Stopping Power of Silicon-carbide Targeted Semiconductor Material against the sourced Energetic Radiation

Abstract: Ion irradiation is used to analyze and modify the structure of condensed matter. It can for instance be used to form and shape nanocrystals in solids as the understanding of the fundamental processes that take place in material under ion irradiation is important for all these applications of ion beams, and great interest from a basic science point of view. The mechanisms involved during  ion  irradiation-induced  displacement  of  atoms  in  uniform  bulk  solids  are  fairly  well  understood  and  described  in  the literature, but many unresolved questions remain regarding the structural modification caused by electronic interactions, and the radiation response of materials with phase boundaries. Especially ion irradiation of nanomaterials is a topic that is under active research. The short-lived collision cascades caused by energetic ions in solids cannot be studied in experiments and are therefore often modeled in computer simulations. Such simulations can give a host of valuable information about processes that occur in nature. It is necessary to validate simulation results by either some other computational method or ideally by experiments. In this article, molecular dynamics simulations were conducted through an online based simulation at maximum and minimum energy levels of 10 and 90 MeV in studying the nature of nuclear-stopping potentials of silicon-carbide semiconductor materials with a uniform factor theory. Logarithmic models were eventually deduced both from the silicon-carbide [y = 0.3110 In (x) + 2.1812 (R2= 0.9845)] and empty material systems [y= 0.4098 In (x) + 1.9024 (R2= 0.9998)]. Meanwhile, the integration of computer simulations and experimental observations are actively required to explain the complex processes during ion irradiation. Keywords: Nuclear stopping power, relativistic, silicon-carbide, semiconductor and logarithm models. 

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APA

Olabode, O. & Physics, N (2021). Uniform factor modeling with the Relativistic Stopping Power of Silicon-carbide Targeted Semiconductor Material against the sourced Energetic Radiation. Afribary. Retrieved from https://afribary.com/works/uniform-factor-modeling-with-the-relativistic-stopping-power-of-silicon-carbide-targeted-semiconductor-material-against-the-sourced-energetic-radiation

MLA 8th

Olabode, Olabimtan, and Nuclear Physics "Uniform factor modeling with the Relativistic Stopping Power of Silicon-carbide Targeted Semiconductor Material against the sourced Energetic Radiation" Afribary. Afribary, 20 Jan. 2021, https://afribary.com/works/uniform-factor-modeling-with-the-relativistic-stopping-power-of-silicon-carbide-targeted-semiconductor-material-against-the-sourced-energetic-radiation. Accessed 15 Jun. 2024.

MLA7

Olabode, Olabimtan, and Nuclear Physics . "Uniform factor modeling with the Relativistic Stopping Power of Silicon-carbide Targeted Semiconductor Material against the sourced Energetic Radiation". Afribary, Afribary, 20 Jan. 2021. Web. 15 Jun. 2024. < https://afribary.com/works/uniform-factor-modeling-with-the-relativistic-stopping-power-of-silicon-carbide-targeted-semiconductor-material-against-the-sourced-energetic-radiation >.

Chicago

Olabode, Olabimtan and Physics, Nuclear . "Uniform factor modeling with the Relativistic Stopping Power of Silicon-carbide Targeted Semiconductor Material against the sourced Energetic Radiation" Afribary (2021). Accessed June 15, 2024. https://afribary.com/works/uniform-factor-modeling-with-the-relativistic-stopping-power-of-silicon-carbide-targeted-semiconductor-material-against-the-sourced-energetic-radiation