The Optical Properties of Silicon Dioxide Doped By Iodine, Coumarin 500 and Rhodamine B

Abstract

A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. In this thesis three types of thin films of silicon dioxide were prepared then doped using three different samples Iodine, Coumarin500 and Rhodamine B. The preparation was done under Electrical Deposition Techniques (E D T) (Spin Coating) using power supply mating 2 Volts and current of 0.03A, at room temperature.

The optical properties such as absorption and absorption coefficient, transmission, reflection, refractive index, excitation coefficient, energy gap and dielectric constant (real and imaginary). Was studied using UV Spectrometer with wavelength in the range 220 to 450 nm.

The study found that the silicon dioxide doped with Rhodamine B is highest in all optical properties studied, except transmission and Energy Gap, while the Coumarin500 has a wide range of wavelengths for all optical properties studied, ranging from 268 to 418 nm. In addition, the doped sample with iodine has a negative reflectivity, while the doped sample with Coumarin500 and Rhodamine B are positively reflectivity.