Insights into the growth processes and microstructural evolution for intrinsic (i) hydrogenated silicon (Si: H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. Numerical modeling of the J–V characteristics and their temperature dependences support the RTSE results and provide new information about the optoelectronic properties of the i-layer materials.
Pearce, J. (2019). Mobility gap profiles in Si: H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells. Afribary. Retrieved from https://afribary.com/works/mobility-gap-profiles-in-si-h-intrinsic
Pearce, Joshua "Mobility gap profiles in Si: H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells" Afribary. Afribary, 22 Apr. 2019, https://afribary.com/works/mobility-gap-profiles-in-si-h-intrinsic. Accessed 08 May. 2024.
Pearce, Joshua . "Mobility gap profiles in Si: H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells". Afribary, Afribary, 22 Apr. 2019. Web. 08 May. 2024. < https://afribary.com/works/mobility-gap-profiles-in-si-h-intrinsic >.
Pearce, Joshua . "Mobility gap profiles in Si: H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells" Afribary (2019). Accessed May 08, 2024. https://afribary.com/works/mobility-gap-profiles-in-si-h-intrinsic