We have applied double p-type amorphous silicon-carbide p-a-SiC:H layer structures to pin-type protocrystalline silicon pc-Si:H multilayer solar cells. The less-pronounced initial
short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current—voltage JD-V and short-circuit current—open-circuit voltage Jsc-Voc characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p/ i interface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector.
Pearce, J. (2019). Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells. Afribary. Retrieved from https://afribary.com/works/double-amorphous-silicon-carbide-p-layer-structures-producing-highly-stabilized-pin-type-protocrystalline-silicon-multilayer-solar-cells
Pearce, Joshua "Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells" Afribary. Afribary, 15 Apr. 2019, https://afribary.com/works/double-amorphous-silicon-carbide-p-layer-structures-producing-highly-stabilized-pin-type-protocrystalline-silicon-multilayer-solar-cells. Accessed 10 May. 2024.
Pearce, Joshua . "Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells". Afribary, Afribary, 15 Apr. 2019. Web. 10 May. 2024. < https://afribary.com/works/double-amorphous-silicon-carbide-p-layer-structures-producing-highly-stabilized-pin-type-protocrystalline-silicon-multilayer-solar-cells >.
Pearce, Joshua . "Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells" Afribary (2019). Accessed May 10, 2024. https://afribary.com/works/double-amorphous-silicon-carbide-p-layer-structures-producing-highly-stabilized-pin-type-protocrystalline-silicon-multilayer-solar-cells