In studies of hydrogenated amorphous silicon (a-Si:H) n–i–p solar cells fabricated by rf plasma-enhanced chemical vapor deposition (PECVD), we have found that the maximum open circuit voltage (Voc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum hydrogen-to-silane flow ratio possible without crossing the thickness-dependent transition into the mixed-phase (amorphous+microcrystalline) growth regime for the ∼200 Å p-layer thickness. The strong dependence of the p-layer phase and solar cell Voc on the underlying i-layer phase also confirms the protocrystalline nature of the optimum Si:H p layer.
Pearce, J. (2019). Maximization of the open circuit voltage for a-Si:H n-i-p solar cells by incorporation of protocrystalline Si:H p-type layers. Afribary. Retrieved from https://afribary.com/works/maximization-of-the-open-circuit-voltage-for-a-si-h-n-i-p-solar-cells-by-incorporation-of-protocrystalline-si-h-p-type-layers
Pearce, Joshua "Maximization of the open circuit voltage for a-Si:H n-i-p solar cells by incorporation of protocrystalline Si:H p-type layers" Afribary. Afribary, 22 Apr. 2019, https://afribary.com/works/maximization-of-the-open-circuit-voltage-for-a-si-h-n-i-p-solar-cells-by-incorporation-of-protocrystalline-si-h-p-type-layers. Accessed 05 May. 2024.
Pearce, Joshua . "Maximization of the open circuit voltage for a-Si:H n-i-p solar cells by incorporation of protocrystalline Si:H p-type layers". Afribary, Afribary, 22 Apr. 2019. Web. 05 May. 2024. < https://afribary.com/works/maximization-of-the-open-circuit-voltage-for-a-si-h-n-i-p-solar-cells-by-incorporation-of-protocrystalline-si-h-p-type-layers >.
Pearce, Joshua . "Maximization of the open circuit voltage for a-Si:H n-i-p solar cells by incorporation of protocrystalline Si:H p-type layers" Afribary (2019). Accessed May 05, 2024. https://afribary.com/works/maximization-of-the-open-circuit-voltage-for-a-si-h-n-i-p-solar-cells-by-incorporation-of-protocrystalline-si-h-p-type-layers